620 Ingenieurwissenschaften und Maschinenbau
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- Masterarbeit (3) (entfernen)
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- CERN (1)
- Eigenspannungen (1)
- FPGA (1)
- GateMate (1)
- Kristallstruktur (1)
- LHC (1)
- Radiation qualification (1)
- Selective Laser Melting (1)
- Selektives Laserschmelzen (1)
- Simulation (1)
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In this thesis, the radiation sensitivity of the novel Cologne Chip GateMate A1 field-programmable gate array (FPGA) is evaluated. An initial introduction of radiation mechanisms and their effects on electronics is given, followed by a brief overview of radiation test standards. The common elements present in FPGAs are discussed, which is followed by details of the GateMate FPGA device and a description of the software design flow. Afterwards, the development of a purpose-built printed circuit board (PCB) for radiation tests with the GateMate FPGA is detailed.
Four components of the GateMate have been tested during three radiation campaigns, as well as a benchmark circuit to compare the radiation performance of the GateMate with other FPGAs tested at the European Organization for Nuclear Research (CERN). The test architecture consists of the device under test (DUT) FPGA and a TESTER FPGA whose task is to provide inputs to the DUT and record its response. The DUT and TESTER designs developed for all tests are discussed in detail. Finally, the results obtained during the irradiation campaigns are presented, showing that the GateMate FPGA performs similarly to other FPGAs using the same process technology. Only the benchmark test was not finalized, as implementation problems prevented its completion in the given time frame. The thesis concludes with a comprehensive summary and outlook.
This thesis presents a power simulation of a MIPS MicroAptiv UP Core implemented as
a virtual ASIC prototype using Taiwan Semiconductor Manufacturing Company(TSMC)
65 nm CMOS technology. Based on the MIPS instruction set program data is generated
and introduced in the simulation by means of initialization files. Before the simulation,
technology specific SRAM modules are integrated into theMIPS core. Two different programs
are used for power characterization. The first program performs frequent memory
accesses by means of load/store word instructions, while the second program is a loop
which operates on registers only and mainly increments addresses. The simulation is
based on a virtual prototype which is generated by synthesis and place & route including
post-layout parasitic extractions. The stimuli for the power extraction is generated
via gate-level simulation and forwarded to the power calculation engine. The effect of X-propagation
on gate-level simulations is avoided by modifying the address-related statements
in the execution data path module, which use another form of 2 to 1 multiplexer,
setting the output to zero for all input signals even with an initial value of ’x’ without
changing the functionality. Finally, the consumed power is provided by reports generated
by the power simulation engine. The memory-centric program consumes 35.39mW
of internal power using instructions, which is 0.73mW less than the internal power of the
register-centric program, and the overall average power is also lower by almost 0.7mW.
Die vorliegende Masterthesis behandelt die Prozess- und Kristallstruktursimulation Selektiv
Lasergeschmolzener CuSn10 Bauteile mit Ansys. Zunächst wurde das Ausgangspulver
untersucht und auf der vorhandenen Fertigungsanlage parametrisiert. Mit dem erstellten
Parametersatz wurden Werkstoffproben gefertigt und untersucht, um zusammen mit
Literaturwerten ein Werkstoffmodell für die Simulationen aufbauen zu können. Anschließend
wurde ein thermisch-mechanisches Modell zur Prozesssimulation in Ansys aufgebaut und
anhand gefertigter Bauteile kalibriert. Es gelang, damit die Eigenspannungen in einem Bauteil
vorherzusagen, welches zuvor gefertigt und mittels Bohrlochmethode untersucht wurde. Eine
weitere Validierung scheiterte aufgrund der gewählten Geometrie des Validierungsbauteiles .
Die Kristallstruktur konnte mit einem in Ansys hinterlegten Werkstoffmodel für einen 1.4404
simuliert und mit vorhandenen Werten überprüft werden. Mit dem erstellten Werkstoffmodell
wurde die Kristallstruktur für CuSn10 vorhergesagt, jedoch im Rahmen dieser Arbeit nicht
validiert. Abschließend wird eine Empfehlung für das weitere Vorgehen gegeben.